型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: MOS管描述: MOSFET P-Chan 200V 6.5A771220-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: Trans MOSFET P-CH Si 60V 11A 3Pin(2+Tab) D2PAK T/R572210-99¥11.3880100-499¥10.8186500-999¥10.43901000-1999¥10.42002000-4999¥10.34415000-7499¥10.24927500-9999¥10.1733≥10000¥10.1353
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品类: MOS管描述: MOSFET N-CH 600V 3.6A D2PAK230720-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 24A 140000mW 3Pin(2+Tab) D2PAK Tube32245-49¥16.192850-199¥15.5008200-499¥15.1133500-999¥15.01641000-2499¥14.91952500-4999¥14.80885000-7499¥14.7396≥7500¥14.6704
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品类: MOS管描述: MOSFET N-CH 30V 100A D2PAK311120-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: MOSFET N-CH 100V 28A D2PAK83285-49¥15.642950-199¥14.9744200-499¥14.6000500-999¥14.50651000-2499¥14.41292500-4999¥14.30595000-7499¥14.2391≥7500¥14.1722
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品类: IGBT晶体管描述: Co-Pack IGBT 超过 21A,Infineon Infineon 的隔离栅极双极晶体管 (IGBT) 为用户提供完整系列选项,以确保覆盖您的应用。 高效额定值使此系列 IGBT 可用于各种应用,且由于具有低切换损耗,可支持各种切换频率。 IGBT 带组合封装快速软恢复并联二极管,用于桥式配置 ### IGBT 晶体管,International Rectifier International Rectifier 提供全面的 IGBT(绝缘栅级双极性晶体管)产品组合,范围从 300V 到 1200V,采用各种技术,可最大程度降低切换和传导损耗,从而提高效率、减少热敏问题并改善功率密度。 公司还提供多种 IGBT 压模,专门设计用于中到高功率模块。 对于需要最大可靠性的模块,可使用可焊接前部金属 (SFM) 压模来消除连接线,从而实现双面冷却,提高热敏性能、可靠性和效率。115810-99¥9.3480100-499¥8.8806500-999¥8.56901000-1999¥8.55342000-4999¥8.49115000-7499¥8.41327500-9999¥8.3509≥10000¥8.3197
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品类: MOS管描述: INTERNATIONAL RECTIFIER IRLZ44NSPBF 场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK 新74755-24¥6.709525-49¥6.212550-99¥5.8646100-499¥5.7155500-2499¥5.61612500-4999¥5.49195000-9999¥5.4422≥10000¥5.3676
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品类: MOS管描述: MOSFET N-CH 30V 75A D2PAK30355-49¥12.214850-199¥11.6928200-499¥11.4005500-999¥11.32741000-2499¥11.25432500-4999¥11.17085000-7499¥11.1186≥7500¥11.0664
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品类: MOS管描述: N沟道 1.2kV 600mA299410-99¥8.1480100-499¥7.7406500-999¥7.46901000-1999¥7.45542000-4999¥7.40115000-7499¥7.33327500-9999¥7.2789≥10000¥7.2517
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品类: MOS管描述: MOSFET N-CH 100V 80A TO-26328685-49¥16.543850-199¥15.8368200-499¥15.4409500-999¥15.34191000-2499¥15.24292500-4999¥15.12985000-7499¥15.0591≥7500¥14.9884
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品类: IGBT晶体管描述: 点火IGBT 15安培, 410伏 Ignition IGBT 15 Amps, 410 Volts132520-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: 单晶体管 双极, NPN, 80 V, 50 W, 10 A, 40 hFE49375-24¥6.399025-49¥5.925050-99¥5.5932100-499¥5.4510500-2499¥5.35622500-4999¥5.23775000-9999¥5.1903≥10000¥5.1192
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品类: MOS管描述: D2PAK N-CH 150V 41A489820-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: MOSFET N-CH 900V 3.6A D2PAK50365-49¥31.344350-199¥30.0048200-499¥29.2547500-999¥29.06721000-2499¥28.87962500-4999¥28.66535000-7499¥28.5314≥7500¥28.3974
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品类: MOS管描述: Mosfet n-Ch 800V 1.8A D2pak956620-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: IGBT 600V 28A 100W D2PAK105720-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: IGBT 分立,STMicroelectronics ### IGBT 分立件和模块,STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。796910-99¥9.3480100-499¥8.8806500-999¥8.56901000-1999¥8.55342000-4999¥8.49115000-7499¥8.41327500-9999¥8.3509≥10000¥8.3197
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品类: MOS管描述: D2PAK P-CH 20V 24A523220-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: N 通道 MOSFET,200V 至 250V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor940310-99¥10.4040100-499¥9.8838500-999¥9.53701000-1999¥9.51972000-4999¥9.45035000-7499¥9.36367500-9999¥9.2942≥10000¥9.2596
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品类: MOS管描述: MOSFET N-CH 100V 5.6A D2PAK720820-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: D2PAK N-CH 50V 75A849720-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor838510-99¥9.2760100-499¥8.8122500-999¥8.50301000-1999¥8.48752000-4999¥8.42575000-7499¥8.34847500-9999¥8.2866≥10000¥8.2556
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品类: MOS管描述: N - CHANNEL 100V - 0.020ohm - 50A - D2PAK的STripFET功率MOSFET N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET139220-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 390V 20A Automotive 3Pin(2+Tab) D2PAK Rail63575-24¥6.588025-49¥6.100050-99¥5.7584100-499¥5.6120500-2499¥5.51442500-4999¥5.39245000-9999¥5.3436≥10000¥5.2704
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 430V 18A 3Pin(2+Tab) D2PAK T/R49985-24¥6.588025-49¥6.100050-99¥5.7584100-499¥5.6120500-2499¥5.51442500-4999¥5.39245000-9999¥5.3436≥10000¥5.2704
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品类: IGBT晶体管描述: Motor / Motion / Ignition Controllers & Drivers IGBT D2PAK 350V 20A471010-99¥9.5280100-499¥9.0516500-999¥8.73401000-1999¥8.71812000-4999¥8.65465000-7499¥8.57527500-9999¥8.5117≥10000¥8.4799
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品类: IGBT晶体管描述: 点火IGBT 20 A, 350 V, N沟道D2PAK Ignition IGBT 20 A, 350 V, N−Channel D2PAK119120-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: IGBT 分立,On Semiconductor 绝缘栅级双极性晶体管 (IGBT),用于电动机驱动器和其他高电流切换应用。 ### IGBT 分立,On Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。30355-24¥5.710525-49¥5.287550-99¥4.9914100-499¥4.8645500-2499¥4.77992500-4999¥4.67425000-9999¥4.6319≥10000¥4.5684
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品类: MOS管描述: D2PAK N-CH 55V 110A65215-49¥18.088250-199¥17.3152200-499¥16.8823500-999¥16.77411000-2499¥16.66592500-4999¥16.54225000-7499¥16.4649≥7500¥16.3876